| 摘要 |
PURPOSE: A method for making field effect devices and capacitors with thin film dielectrics and resulting devices is provided to prevent the occurrence of a charge trap on the surface and have sufficient electrostatic capacity. CONSTITUTION: The electronic device having a capacitor structure(11) is formed by depositing a metal layer for specifying a first electrode(20) on the film of high dielectric constant materials and depositing a dielectric layer(22) of the capacitor structure(11) later on the first electrode(20). During this process, by exposing the first electrode(20) under the plasma of pure nitrogen, the partial oxidization of the first electrode(20) is prevented and the density of the charge trap on an electrode/dielectric interface is reduced. Besides, the mutual diffusion of the electrode and the dielectric is prevented.
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