| 摘要 |
PURPOSE: A manufacturing method for a stacked capacitor is provided to easily work a noble metal such as platinum even if it is adopted as a lower electrode and the stacked capacitor is provided to suppress generation of a chemical reaction between a dielectric film or a sidewall lower electrode and a conductive plug. CONSTITUTION: After formation is completed up to an insulating film(4), a film to be etched is formed on the insulating film(4), and a pattern of a lower electrode center(5A) is formed on the film to be etched, the insulating film(4) and a part of a conductive plug(3). A material of the lower electrode center(5A) is embedded into the pattern, and further a top insulating film(6A) is embedded, and then the film to be etched is removed. Film-formation is performed using a material of a sidewall lower electrode(7A), and etch-back is performed, and then a dielectric film(8) and an upper electrode(9) are formed. Since the insulating film(4) prevents contact of the conductive plug(3) and the dielectric film(8) or the sidewall lower electrode(7A), generation of the chemical reaction is suppressed.
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