| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the number of processing steps in manufacturing a semiconductor element which is formed through a material having a low permittivity. CONSTITUTION: The method for manufacturing a semiconductor device includes the steps of forming the first conductive layer(50) adjacent a substrate(52), forming an etch stop layer(54) on the conductive layer, and forming a dielectric layer(56) on the etch stop layer. The dielectric layer includes a material having a low dielectric constant, and via is formed through the dielectric layer to expose the etching stop layer at the bottom, with porous sidewall being produced. The exposed etch stop layer(54) is etched using an etchant that cooperates with etched material from the etching stop layer to form a polymeric layer to coat the porous sidewall of the via. Since the etchant cooperates with the etched material from the etching stop layer to form the polymeric layer coating the porous sidewall of the via, a separate coating layer deposition step is not required after the via is etched and cleaned. After the porous sidewall has been coated and polymeric material has been etched from the bottom of the via, a barrier metal layer is formed on the polymeric layer, a seed layer is formed on the barrier metal layer, and the second conductive layer is formed on the seed layer contacting the first conductive layer.
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