发明名称 SYSTEM AND METHOD FOR PROCESSING SUBSTRATE
摘要 PURPOSE: A system and method for processing a substrate are provided to measure the thickness of a resist film coating a wafer by a peripheral exposure apparatus inside the substrate processing system. CONSTITUTION: In a peripheral exposure apparatus(51) in a coating development processing system, the thickness of a resist film on a wafer(W) is measured by a film thickness sensor(64) that senses the film thickness of the resist film by laser beam and moving the wafer(W) on a loading stand(61) in the X direction.
申请公布号 KR20010051210(A) 申请公布日期 2001.06.25
申请号 KR20000062559 申请日期 2000.10.24
申请人 TOKYO ELECTRON LIMITED 发明人 FUKUDA YUJI;OGATA KUNIE
分类号 H01L21/027;G03F7/16;H01L21/00;H01L21/68;(IPC1-7):H01L21/027 主分类号 H01L21/027
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