MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To clean a bottom part of a connection hole effectively by preventing the reattachement of copper to a side wall of the connection hole in argon sputtering and resolving an etching problem of an organic insulation film in a hydrogen plasma method. CONSTITUTION: A method for manufacturing a semiconductor device which includes a process wherein a recessed part 23 which reaches a first interconnection 15 made of copper or a copper alloy is formed in an insulation film 16 which covers the first interconnection 15. After forming the recessed part 23, a plasma processing is executed using a gas including hydrogen and nitrogen with the first interconnection 15 exposed in a bottom part of the recessed part 23. Or, a plasma processing is executed using a gas including hydrogen while a substrate formed with the first interconnection 15 being cooled with the first interconnection I5 exposed in the bottom part of the recessed part 23.