| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam exposing method, with which sufficient accuracy in overlapping can be provided by correcting the position of an electron beam corresponding to an electron beam position drift quantity reflected with the charge-up of a semiconductor wafer. SOLUTION: Before the start of pattern exposure, alignment is performed by a correction coefficient provided by detecting plural alignment marks A-D on the wafer (steps 401 and 402), afterwards, exposure is started, an alignment mark A' is detected again at prescribed timing in that process (step 404), a difference from a position (coordinate) at the time of detection before exposure is found and defined as electron beam position drift quantity (step 405), this electron beam position drift quantity is superimposed on the deflection quantity of the electron beam and the exposure position of the electron beam is corrected (step 406).
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