| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate circuit of an insulated gate semiconductor element of high reliability, which enables high frequency operation of an insulated gate semiconductor element and drives stably a power converting device like an inverter. SOLUTION: This gate circuit is constituted of an insulated gate semiconductor element 10, a gate resistor 11, first series semiconductor elements constituted of switching element 12, 13 in which an NPN and a PNP semiconductor elements are connected in series and resistors 23, 24 connected in series with the switching elements 12, 13, a resistor 14 connected with the gates of the first series semiconductor elements, second series semiconductor elements 15, 16 constituted similarly to the first elements, delay circuits 18, 19 for delaying a specified time from a switching control signal 17, parallel circuits 25 and 26 of resistors and capacitors which are connected in series with the second series semiconductor elements 15 and 16, respectively, and a positive and a negative control power sources P, N.
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