| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to prevent a surface position of a silicon layer from shifting largely in depth of a substrate even when cobalt silicide is formed. SOLUTION: A polysilicon film 103 as a gate electrode, a side wall 104, and an impurity diffusion layer 105 as a source region or a drain region are formed on a silicon substrate 100. The polysilicon layer 103 is etched back to form a recessed part 107 and a cobalt film 108 is deposited. A first a heat treatment step is carried out at 500 deg.C to form a CoSi layer 110 on the surface of the polysilicon film 103 and the surface of the impurity diffusion layer 105. Then, a silicon film 111 is deposited all over the silicon substrate 100. A second heat treatment step, for example at 800 deg.C, a CoSi layer 112 is formed on the surface of the polysilicon 103 and the surface of the impurity diffusion layer 105.
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