| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device as a smart power IC which is enhanced in withstand voltage without increasing a transistor in ON-state resistance and area occupied by itself. SOLUTION: A second conductivity-type drain diffusion layer 2 and a second conductivity-type source diffusion layer 3 are formed separated from each other on the main surface of a first conductivity-type semiconductor substrate 1, a gate electrode 7 is formed on the main surface of the semiconductor substrate 1 between the drain diffusion layer 2 and the source diffusion layer 3 through the intermediary of a gate insulating film 6 for the formation of a field effect transistor, where a depletion layer is expanded in the lower region of the drain diffusion layer 2, an electrical field is set uniform in intensity near the surface of the first conductivity semiconductor substrate 1, and a semiconductor device is enhanced in breakdown voltage.
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