发明名称 |
METHOD FOR FORMING DUAL DAMASCENE EQUIPPED WITH AIR GAP |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a dual damascene with a dielectric layer formed on a substrate equipped with a first conductive line and an air gap. SOLUTION: A method for forming a dual damascene structure has a step for forming a dielectric layer on the first conductive line, a step for forming a via-hole opening so as to expose the first conductive line in the dielectric material and the dielectric layer so as to expose the first conductive line, and a step for forming a second conductive line and a via-plug by filling the trench and the via-hole opening with a conductive material.
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申请公布号 |
JP2001168189(A) |
申请公布日期 |
2001.06.22 |
申请号 |
JP19990345504 |
申请日期 |
1999.12.03 |
申请人 |
UNITED MICROELECTRONICS CORP |
发明人 |
O SHIMEI |
分类号 |
H01L23/522;H01L21/3205;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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