发明名称 METHOD FOR FORMING DUAL DAMASCENE EQUIPPED WITH AIR GAP
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a dual damascene with a dielectric layer formed on a substrate equipped with a first conductive line and an air gap. SOLUTION: A method for forming a dual damascene structure has a step for forming a dielectric layer on the first conductive line, a step for forming a via-hole opening so as to expose the first conductive line in the dielectric material and the dielectric layer so as to expose the first conductive line, and a step for forming a second conductive line and a via-plug by filling the trench and the via-hole opening with a conductive material.
申请公布号 JP2001168189(A) 申请公布日期 2001.06.22
申请号 JP19990345504 申请日期 1999.12.03
申请人 UNITED MICROELECTRONICS CORP 发明人 O SHIMEI
分类号 H01L23/522;H01L21/3205;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L23/522
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