| 摘要 |
PROBLEM TO BE SOLVED: To enable to form a fine wiring groove and a connecting hole, by highly accurately machining a wiring groove and a connecting hole of dual damascene structure without machining at the connecting hole with a high aspect ratio and at the position having a high step difference. SOLUTION: A silicon oxide first interlayer insulating film 12, an etching stop layer 13, a silicon oxide second interlayer insulating film 14, and a mask layer 15 are formed in this order. Thereafter, a wiring groove pattern 16 is opened in the mask layer 15, and a via-hole pattern 17 is opened in the second interlayer insulating film 14 and the etching stopper 13 so as to at least extend to the wiring groove 16. A wiring layer 18 is formed in the second interlayer insulating film 14 by means of the mask layer 15 as a mask and, at the same time, a via-hole 19 is formed on the first interlayer insulating film 12 by means of the etching stop layer 13 as an etching mask.
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