| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growing method, with which pattern matching is enabled in a photolithography process after the epitaxial growth of silicon. SOLUTION: Concerning the epitaxial growing method for producing a semiconductor device by performing epitaxial silicon growth plural times on the surface of a silicon substrate, the pattern of silicon oxide film is formed on the surface of an N- silicon epitaxial growing layer 2, a partial oxide film region is formed on the surface of the N- silicon epitaxial growing layer 2 by a photolithography method, an embedded silicon epitaxial growing layer 6 is applied onto the silicon substrate after the process, and pattern matching in the post-process is performed while using an oxide film pattern 31".
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