发明名称 METHOD FOR MEASURING CURRENT OF PLASMA, METHOD AND APPARATUS FOR PROCESSING SURFACE OF OBJECT USING PLASMA
摘要 PROBLEM TO BE SOLVED: To solve problems that is largely influenced by variations of current or transit current in plasma and is difficult to accurately measure current, also is very difficult to measure accurately by removing influences of electrons, ions in plasma, secondary electrons generated by contacting with plasma, and in addition, shifting current due to variation of plasma state, and finally is difficult to measure particles being neutral electrically. SOLUTION: An amount of ions in plasma is measured by measuring only relatively high energy of secondary electrons, an influences of electrons in plasma are removed from functional materials. Further, a luminescence spectroscopy of plasma is carried at the same time.
申请公布号 JP2001167896(A) 申请公布日期 2001.06.22
申请号 JP19990351276 申请日期 1999.12.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIZUNO BUNJI;KANEDA HISATAKA;TAKASE MICHIHIKO;NAKAYAMA ICHIRO;NAKAMURA KEIJI;SUGAI HIDEO
分类号 H05H1/00 主分类号 H05H1/00
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