| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device, a photomask to be used for producing the same and an overlapping accuracy improving method, with which accuracy in overlapping is improved by detecting the aberration of a lens to become a problem in the production process of the semiconductor device. SOLUTION: An auxiliary mark 12 for overlapping accuracy improvement provided with an inner mark 1 having inner mark inside step parts 1a of four sides as detection step parts and an outer mark 2 having outer mark inside step parts 2a as detection step parts formed so as to surround the inner mark 1 and provided almost parallel with the inner mark inside step parts 1a of four sides are provided on a semiconductor substrate.</p> |
