发明名称 HEAT SINK FOR SEMICONDUCTOR MATERIAL AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a heat sink for a semiconductor material and a semiconductor device using the heat sink. SOLUTION: A heat sink for a semiconductor material which uses a copper plate as its substrate has a graphite dispersed nickel plated layer, a nickel plated layer or a two-layer plated layer consisting of a nickel plated layer, and a graphite dispersed nickel plated layer as its lower layer. The heat sink has an electrolytic chromic acid treated layer as its upper layer or is formed with a nickel plated single layer. The heat sink and a semiconductor device using the heat sink are excellent in an adhesion to an adhesive film and are excellent also to such a heat resistance as a reflow resistance.
申请公布号 JP2001168249(A) 申请公布日期 2001.06.22
申请号 JP19990350805 申请日期 1999.12.09
申请人 TOYO KOHAN CO LTD 发明人 OMURA HITOSHI;TOMOMORI TATSUO;OMURA HIDEO;NARITA KAZUO
分类号 H01L23/373;C23C22/24;C23C28/00;(IPC1-7):H01L23/373 主分类号 H01L23/373
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