发明名称 |
HEAT SINK FOR SEMICONDUCTOR MATERIAL AND SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a heat sink for a semiconductor material and a semiconductor device using the heat sink. SOLUTION: A heat sink for a semiconductor material which uses a copper plate as its substrate has a graphite dispersed nickel plated layer, a nickel plated layer or a two-layer plated layer consisting of a nickel plated layer, and a graphite dispersed nickel plated layer as its lower layer. The heat sink has an electrolytic chromic acid treated layer as its upper layer or is formed with a nickel plated single layer. The heat sink and a semiconductor device using the heat sink are excellent in an adhesion to an adhesive film and are excellent also to such a heat resistance as a reflow resistance.
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申请公布号 |
JP2001168249(A) |
申请公布日期 |
2001.06.22 |
申请号 |
JP19990350805 |
申请日期 |
1999.12.09 |
申请人 |
TOYO KOHAN CO LTD |
发明人 |
OMURA HITOSHI;TOMOMORI TATSUO;OMURA HIDEO;NARITA KAZUO |
分类号 |
H01L23/373;C23C22/24;C23C28/00;(IPC1-7):H01L23/373 |
主分类号 |
H01L23/373 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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