| 摘要 |
PROBLEM TO BE SOLVED: To provide a protective circuit which can easily change current detection level while reliably protecting an element to be protected and has wide versatility, and to provide a semiconductor device having the protective circuit. SOLUTION: A resistance element 17 for detection provided for a drive protective circuit 10 converts a sense current IS into a sense voltage Vs. A base current correction type current mirror circuit 21 is connected to a regulated voltage source 12 which is provided for the circuit 10, outputs voltage Vref and has the same temperature characteristics as that of an IGBT1, and current generated by the circuit 21 can be set by a resistance circuit 30 serially connected to a Tr 19 from the outside of the circuit 10. A resistance element 14 for reference voltage generation formed in the same chip as that of the element 17 is connected to a Tr 18.
|
