NON-VOLATILE SEMICONDUCTOR MEMORY AND ITS PROGRAMMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory and its programming method in which margin between threshold voltage are kept constant after programming. SOLUTION: This device comprises bit lines, plural word lines arranged perpendicularly to these bit lines, plural memory cells arranged respectively at intersection regions of the bit lines and the word lines, a storing circuit having at least two latches latching data, and a program data discriminating circuit setting the bit lines to either of program voltage and program prohibiting voltage depending on a logic state of data latched by the latch by programming operation.