ELECTRONIC VIRTUAL GROUND MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a new method of manufacturing an electronic memory device which is integrated on a semiconductor containing a virtual ground cell matrix. SOLUTION: A matrix is formed on a semiconductor substrate 10 as it is provided with continuous bit lines 7 which extend as discrete parallel stripes traversing a substrate 10. The matrix contains a circuit part C' for selective transistors 20, and a decoder equipped with a P-channel and an N-channel MOS transistor and an address circuits A and B are built in a memory device. A process in which an N well 11 where the P-channel transistor is housed is formed on a part A of the substrate, and another process in which the active regions of all transistors are specified by a screen mask 33 and an isolation layer 13 is grown through the intermediary of an opening provided to the mask 33, are at least provided. The active region specifying mask 33 is not opened on the matrix region C" of the memory cell.