METHOD AND APPARATUS OF CONTROLLING UP AND DOWN TEMPERATURE FOR SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of controlling up and down temperatures for preventing a crack even when a semiconductor substrate with different up and down temperature characteristics is stored in a treatment furnace and the temperature thereof is made up or down. SOLUTION: When the semiconductor substrate is treated under the control of up down temperatures in oxidation, diffusion or DVD processes, the temperatures at positions of the semiconductor substrate are measured until a given time passed from the inserting point of the substrate in the treatment furnace at the temperature. A temperature increasing rate and an in-face temperature distribution are calculated from the measured results to judge the up and down temperature characteristics. Then, a temperature control program adequate for the up and down temperature characteristics is selected automatically from one or more kinds of temperature control programs previously formed according to various kinds of semiconductor substrates of different up and down temperature characteristics. As a result, the semiconductor substrate is treated under up and down temperature control on the basis of the selected temperature control program.