| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting element using a nitride semiconductor made of an AlGaN or particularly a light emitting element for emitting a light having desired color rendering properties by laminating a well layer for emitting a different color and mixing the colors. SOLUTION: The nitride semiconductor light emitting element comprises an active layer made of a multi-quantum well structure having a first light emitting region having a first well layer made of a nitride semiconductor including In, a second light emitting element having a second well layer for emitting a light having a longer main peak wavelength than that of the main peak of the light emitted from the first well layer and a third light emitting region having a third well layer for emitting a light having a longer main peak wavelength than that of the main peak of the light emitted from the second well layer. In the element, the active layer includes at least one constitution obtained by sequentially laminating the first, second and third light emitting regions in this order as seen from a p-type nitride semiconductor layer side. |
