发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To solve a problem in which a semiconductor memory device is increased in size and deteriorated in sense speed because a sense amplifier driver is arranged in a cross region which is produced by dividing a cell array through a hierarchical word line structure. SOLUTION: Power supply-side sense amplifier drivers 10a and ground-side sense amplifier drivers 10b which are arranged in a sense amplifier row 10 are connected to sense amplifiers 10c respectively to supply a sense amplifier drive voltage to them, so that a semiconductor memory device of this constitution can be enhanced in sense speed without increasing it in chip size. |
申请公布号 |
JP2001168302(A) |
申请公布日期 |
2001.06.22 |
申请号 |
JP19990353504 |
申请日期 |
1999.12.13 |
申请人 |
NEC CORP;NEC IC MICROCOMPUT SYST LTD |
发明人 |
KITAYAMA MAKOTO;FUKUZOKURI YUKIO;OBARA TAKASHI;KOSHIKAWA KOJI;NAGANAMI TORU;MATSUBARA YASUSHI;MITSUFUJI HIDEKI |
分类号 |
G11C11/41;G11C5/02;G11C7/06;G11C11/401;G11C16/06;H01L21/8242;H01L27/108 |
主分类号 |
G11C11/41 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|