| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a spin-valve type thin-film magnetic element, which indicates a large magnetic resistance change ratio and is superior in sensitivity of an external magnetic field. SOLUTION: This adopted spin-valve type thin-film magnetic element 1 comprises a laminate 11, in which there are laminated an antiferromagnetic layer 30, a fixing magnetic layer 25 which comes into contact with the antiferromagnetic layer 30 and fixes the magnetization direction by an exchange bond magnetic field with the antiferromagnetic layer 30, a nonmagnetic conductive layer 29 coming into contact with the fixing magnetic layer 25, a second free magnetic layer 22 coming into contact with the nonmagnetic conductive layer 29, a nonmagnetic intermediate layer 23 which comes into contact with the second free magnetic layer 22, a first free magnetic layer 21 which comes into contact with the nonmagnetic intermediate layer 23, bonds the second free magnetic layer 22 in an antimagnetic manner, and forms a ferri magnetic state, together with the second free magnetic layer 22, and a backed layer 61 which comes into contact with the first free magnetic layer 21 and is higher in conductivity than the first free magnetic layer 21.</p> |
