发明名称 DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a liquid crystal display device. SOLUTION: The thin film transistor of the device has a crystalline semiconductor layer formed on an insulating surface, a pair of first impurity regions formed in the crystalline semiconductor layer and doped with impurities of first concentration to give conductivity, a channel forming region formed in the crystalline semiconductor layer and between the pair of first impurity regions, a pair of second impurity regions formed between the pair of first impurity regions and the channel forming region and doped with impurities of second concentration lower than the first concentration to give conductivity, a gate insulating film in contact with the channel forming region, and a gate electrode in contact with the gate insulating film. Further, an interlayer insulating film is formed on the crystalline semiconductor film, an organic resin film with a flat surface is formed on the interlayer insulating film, and a pixel electrode is formed on the organic resin film.</p>
申请公布号 JP2001166339(A) 申请公布日期 2001.06.22
申请号 JP20000319752 申请日期 2000.10.19
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;MASE AKIRA;HIROKI MASAAKI;TAKEMURA YASUHIKO;CHO KOYU;UOJI HIDEKI;NEMOTO HIDEKI
分类号 G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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