| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi-wavelength semiconductor laser element of a configuration which is easily manufactured. SOLUTION: A multi-wavelength semiconductor laser element 10 comprises a semi-insulating GaAs substrate 16, where first and second slopes 12 and 14 tilted, at a tilt angleθ1 and a tilt angleθ2 respectively, in a (111) A plane direction are provided alternately, as well as an n-AlGaInP lower clad layer 18, GaInP active layer 20, and a P-AlGaInP upper clad layer 22 epitaxial-grown sequentially by an MOCVD method, etc., along the slope of GaAs substrate 16. A p-side electrode 24 is formed on slopes 26 and 28 of the upper clad layer 22 parallel to the first and second slopes 12 and 14 of the GaAs substrate 16, while an n-side electrode 30 is formed on the rear surface of the GaAs substrate 16.
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