| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to optimize a structure of a barrier metal film. SOLUTION: In a semiconductor device, a tungsten (W) film 12 is buried in a contact hole with the barrier metal film 11 in-between on a semiconductor substrate 1. The barrier metal film 11 is a laminated film made up of a titanium(Ti) film 8, a first titanium nitride(TiN) film 9 heat-treated with an Ar gas at high temperatures, and a second non-heated titanium nitride(TiN) film 10 without the heat treatment with the Ar gas.
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