| 摘要 |
PROBLEM TO BE SOLVED: To deposit a thin insulating film, such as a semiconductor film of silicon, etc., or silicon nitride film, etc., in a safe environment under a reduced pressure which is close to the atmospheric pressure and at which no expensive vacuum evacuation device is required, while an explosive gaseous raw material is used. SOLUTION: In a method of forming thin film, the pressure of the whole gaseous raw material contributing to the deposition of a thin film is maintained at the atmospheric pressure of 760 Torr or lower, so that no expensive vacuum evacuating device may be required even though the partial pressure of the gaseous raw material is maintained at <=1 Torr so that a deposition seed may be transported to a substrate under such a gas pressure. Accordingly, the gaseous raw material diluted to at least <=1,000 ppm with a chemically inert gas is introduced to a reaction chamber provided with a catalyst body which decomposes the gaseous raw material, when the material comes into contact with the body and a substrate holder which holds a substrate sample and exhausted from the chamber so as to maintain the pressure of the gaseous raw material filling up the chamber to such a reduced-pressure level lower than the atmospheric pressure of 760 Torr that no expensive vacuum evacuating device is required.
|
