| 摘要 |
PROBLEM TO BE SOLVED: To improve a threshold current, operation current, production yield, and reliability, etc., by suppressing crystal defects which occur inside the structure of a semiconductor element. SOLUTION: A substrate 101 is an n-type GaAs substrate, 102 is an n-type AlGaInP clad layer, 103 is the active layer of distorted quantum well structure comprising a GaInP well layer and AlGaInP barrier layer, 104 is a p-type AlGaInP first clad layer, 105 is a p-type GaInP etch-stopping layer, 106 is a p-type AlGaInP second clad layer, 107 is a p-type GaInP band discontinuous relaxation layer, 108 is an n-type AlInP current constriction layer, and 109 is a p-type GaAs contact layer.
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