| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device, and method and system of electroplating in which local rising of metallization due to pattern density can be suppressed on a semiconductor substrate. SOLUTION: The method for fabricating a semiconductor device comprises steps (a), (b) for forming a seed copper film 4 on an interlayer insulation film 2 formed on a semiconductor substrate 1, a step (c) for depositing a copper plating film 7 using an electrolytic solution containing ions of the seed copper film 4, a plating reaction acceleration component 10 and an inhibitor component 11, a step (d) for removing the acceleration component 10 on the surface of the copper plating film 7 deposited through electrolytic plating, a step (e) for depositing a copper film 4a of desired thickness by electrolytic plating on the copper plating film 7 from which the acceleration component 10 is removed.
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