| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI element whose floating body effect is removed and static electricity discharge property is improved, and its manufacturing method. SOLUTION: The element comprises a base substrate 101, a buried oxide film 102 formed on the base substrate to expose a specified region of the base substrate, a body contact layer 103 formed on the exposed base substrate as thick as the buried oxide film, a body layer 104a of a transistor formed on the buried oxide film 102 and the body contact 103, a gate 106 with a gate oxide film 105 formed on the body layer, and a drain region 108 formed inside a body layer region at both sides of the gate deep enough to come into contact with the buried oxide film, and a source region 107 formed in contact with the body contact layer.
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