| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose speed can be made faster which can control a threshold value and which can restrain a floating body effect sufficiently, by a method wherein the semiconductor device can deal with the higher integration of semiconductor devices, a parasitic capacitance in an SOI transistor can be reduced further, and bias voltages which are different in the operation and the standby state of the SOI transistor are applied, and to provide its manufacturing method. SOLUTION: In the semiconductor device, a MOS transistor is formed in a semiconductor layer 13 on an SOI substrate 10 in which the semiconductor layer 13 is formed on a semiconductor substrate 11 via a buried insulating film 12, and a MOS transistor is formed in a semiconductor layer 23 on an SOI substrate 20 in which the semiconductor layer 23 is formed on a semiconductor substrate 21 via a buried insulating film 22. In the semiconductor device, the bias voltages which are different in the operating state and the standby state of a semiconductor circuit constituted of the MOS transistors are applied to the semiconductor substrates 11, 21.
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