| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film-capacitor whose electrostatic capacitance hardly decreases, even in the high frequency region of 1 GHz or higher. SOLUTION: A dielectric thin film comprising perovskite oxide is formed on a lower electrode 26. Then one of thermal processes in an atmosphere containing hydrogen, a process where direct electric field of not lower than coercive electric field of the perovskite oxide is applied for a second or more to a place between an upper electrode and a lower electrode, and a process where positive and negative electric fields of not lower than coercive electric field of the perovskite oxide is applied alternately 105 times or more, to a place between the upper electrode and the lower electrode, is performed, to make the remanent polarization value of the dielectric thin film not to exceed 2.0 μC/cm2. |
