NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To avoid making algorithm complex in normal write-in operation and write-in operation before erasion. SOLUTION: This device is constituted so that a test bit is generated using a test bit generation matrix in which the number of elements of '1' of each row are the number of pieces required for generating a test bit and an odd number, in normal write-in operation and write-in operation before erasion.