III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve flatness of a layer below an n-clad layer comprising AlxGa1-xN. SOLUTION: An n-clad layer 104, comprising AlxGa1-xN, is not formed directly at a high carrier-density n+-type GaN layer 103 forming a negative electrode but through a low carrier-density n-type GaN layer 103L. Thus, the carrier density of n+-type GaN layer 103, which forms a negative electrode is 6×1018/cm3 while the flat n-type GaN layer 103L of carrier density about 5×1017/cm3 is provided directly below the n-clad layer 104.