| 摘要 |
PROBLEM TO BE SOLVED: To reduce the thickness of a silicon thin film to a prescribed value without deteriorating it in quality and avoiding it that the oxidation of crystal defects generated when a usual sacrificial oxidation is carried out is accelerated, the surface is roughened by the influence of a foreign object, and an oxide film is deteriorated in withstand voltage due to the fact that the surface gets rough. SOLUTION: A SOI wafer provided with a silicon thin film which deposits oxygen little is prepared through an SIMOX method or a lamination method, the SOI wafer is cleaned with an alkaline solution such as SCI or TMAH, and a silicon ultra-thin film SOI is manufactured by the etching action of the alkaline solution.
|
