| 摘要 |
PROBLEM TO BE SOLVED: To from a ballast resistor constituted of a metallic layer without increasing the manufacturing process in a bi-polar transistor. SOLUTION: A collector contact layer 23, a collector layer 24, a base layer 25, an emitter layer 26, an emitter cap layer 27, and a emitter contact layer 28 are successively laminated on a semi-insulating GaAs substrate 22. A base/ collector mesa 29 constituted of the collector layer 24 and the base layer 25 is worked, and an emitter mesa 30 constituted of the emitter layer 26, the emitter cap layer 27, and the emitter contact layer 28 is worked. Afterwards, a collector electrode 33 is formed on the collector contact layer 23 in the area in which the collector electrode is formed, and a ballast resistor 36 is formed on an insulating film 32.
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