STATIC RANDOM ACCESS MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a static RAM(random access memory) where the data can be stably read out even with its slow operation and also the increase of its circuit scale can be satisfactorily suppressed. SOLUTION: This static RAM includes a memory cell and a data line pre- charge circuit 106 which are placed between a positive data line D and a negative data line DB. Two PMOS 107 and 108 are connected in series between both lines D and DB and the power voltage Vcc is applied to a connecting point between both PMOS 107 and 108. Then the gate of the PMOS 107 whose drain or source is connected to the line D is connected to the line DB, and the gate of the PMOS 108 whose source or drain is connected to the line DB is connected to the line D. In such a constitution, the potential of the data D or DB is clamped by the voltage Vcc in a low impedance state according to the stored data when the data are read out of a memory. Thus, the potential of the read-out data is stabilized.