METHOD OF ETCHING INSULATING FILM OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of etching an insulating film of a semiconductor device. SOLUTION: An insulating film such as a silicon oxide film or a silicon nitride film is formed on a semiconductor substrate, and the insulating film is dry-etched by using a reactant gas containing C4HXF8-XO gas (where, X is an integer ranging 0-4) such as C4F8O gas. Contact holes are formed by etching the insulating film with such dry etching.