发明名称 MOSFET DEVICE SYSTEM AND METHOD
摘要 A MISFEED device system and method of fabricating same are disclosed. The present invention utilizes Shotky barrier contacts (301, 302) for source and/or drain contact fabrication within the context of a MISFEED device structure to eliminate the requirement for halo/pocket implants and shallow source/drain extensions to control short channel effects. Additionally, the present invention unconditionally eliminates the parasitic bipolar gin associated with MISFEED fabrication, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics as compared to the prior art.
申请公布号 WO0145157(A1) 申请公布日期 2001.06.21
申请号 WO2000US34082 申请日期 2000.12.15
申请人 SPINNAKER SEMICONDUCTOR, INC. 发明人 SNYDER, JOHN, P.
分类号 H01L29/417;H01L21/336;H01L21/8234;H01L27/095;H01L29/76;H01L29/78;(IPC1-7):H01L21/336 主分类号 H01L29/417
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