| 发明名称 |
Semiconductor device having dummy gates and its manufacturing method |
| 摘要 |
In a semiconductor device including active areas where transistors are formed and a field area for isolating the active areas from each other, the field area has a plurality of dummy areas where dummy gates are formed. |
| 申请公布号 |
US2001004122(A1) |
申请公布日期 |
2001.06.21 |
| 申请号 |
US20000735005 |
申请日期 |
2000.12.12 |
| 申请人 |
NEC CORPORATION |
发明人 |
ITO KAZUYUKI |
| 分类号 |
H01L23/52;G03F1/08;G03F1/68;G03F1/70;H01L21/027;H01L21/3205;H01L21/336;H01L21/762;H01L21/768;H01L21/8234;H01L23/522;H01L27/088;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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