Controlled semiconductor arrangement e.g. for buck-boost circuit or inverters

摘要

A controlled semiconductor arrangement of a MOS-field-effect transistor (T), a diode (D) and a Schottky diode (SD), in which the source or drain of the MOSFET (T) are connected to the anode of the Schottky diode (SD). The bulk-zone of the MOSFET (T) is connected via the anode contact (8) of the diode (D) to the drain (5;4) or source (4;5) of the MOSFET (T), the latter being specifically a n-channel MOS- FET (T), and the diode a pn n-diode structure.