| 摘要 |
<p>A lateral thin-film Silicon-On-Insulator (SOI) device (20) includes a semiconductor substrate (22), a buried insulating layer (24) on the substrate and a Lateral Insulated Gate Bipolar Transistor (LIGBT) device in an SOI layer on the buried insulating layer (24) and having a source region (28) of a first conductivity type formed in a body region (30) of a second conductivity type opposite to that of the first and a body contact region (40) of the second conductivity type in the body region (30) and connected to the source region (28). A lateral drift region (32a) of a first conductivity type is provided adjacent the body region (30) and forms a lightly-doped drain region, and a drain contact region (34) of the first conductivity type is provided laterally spaced apart from the body region by the drift region with an anode region (42) of the second conductivity type in the drain region and connected to the drain contact region (34). A gate electrode (36) is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region (32a) adjacent the body region (30), with the gate electrode (36) being at least substantially insulated from the body region and drift region by a surface insulation region (38). Improved device performance is achieved by making a dimension of the source region in a direction normal to a direction of current flow between the source region (28) and the drain contact region (34) greater than a corresponding dimension of the drain contact region and of the anode region (42).</p> |
