| 摘要 |
<p>A method is provided for making a microelectromechanical device with high aspect ratio features. First, an insulating layer is deposited on a substrate. Next, a base in the form of a first conducting layer is deposited on the insulating layer and is patterned. A first sacrificial layer is then deposited on the first conducting layer and patterned. A slider in the form of a second conducting layer is then deposited on the first sacrificial layer and patterned. A second sacrificial layer is then deposited on the second conducting layer and patterned. Next, a retainer in the form of a third conducting layer is deposited on the second sacrificial layer and patterned. A mask is then deposited on the third conducting layer and patterned. Next, a reflector in the form of a fourth layer is deposited through the mask onto the third conducting layer. Finally, the mask, first sacrificial layer and second sacrificial layer are removed.</p> |
