发明名称 |
Flash EEPROM with on-chip erase source voltage generator |
摘要 |
A Flash EEPROM having negative voltage generator means for generating a negative voltage to be supplied to control gate electrodes of memory cells for erasing the memory cells. The Flash EEPROM also has first positive voltage generator means for generating a first positive voltage, independent from an external power supply of the Flash EEPROM, to be supplied to source regions of the memory cells during erasing.
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申请公布号 |
US2001004327(A1) |
申请公布日期 |
2001.06.21 |
申请号 |
US20010768744 |
申请日期 |
2001.01.23 |
申请人 |
DALLABORA MARCO;VILLA CORRADO;BETTINI LUIGI |
发明人 |
DALLABORA MARCO;VILLA CORRADO;BETTINI LUIGI |
分类号 |
G11C5/14;G11C16/16;(IPC1-7):G11C11/34 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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