发明名称 |
Verfahren zur Behandlung eines Aluminium enthaltenden Musters |
摘要 |
<p>A post-etch treatment method is provided which is capable of imparting high corrosion prevention performance to aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has an oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, a plasma is generated using a gas having a hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr).</p> |
申请公布号 |
DE69033663(T2) |
申请公布日期 |
2001.06.21 |
申请号 |
DE1990633663T |
申请日期 |
1990.08.20 |
申请人 |
HITACHI, LTD. |
发明人 |
FUKUYAMA, RYOOJI;KAKEHI, YUTAKA;NAWATA, MAKOTO;KAWAHARA, HIRONOBU;SATO YOSHIAKI, KUDAMATSU-SHI;TORII, YOSHIMI;KAWARAYA, AKIRA;SATO, YOSHIE |
分类号 |
C23F4/00;H01L21/02;H01L21/3213;(IPC1-7):H01L21/321 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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