An apparatus for thin film deposition comprises a vacuum chamber, a plurality of sputtering cathodes provided in the vacuum chamber, each including a cathode and a target, and a wafer holder adapted to support wafers in the vacuum chamber and including a shield for separating the target from the wafers. Particles sputtered from the target are deposited on the wafer to form thin film. For each target, a controller varies the distance (d) between the axes of the wafer and target and the distance (h) along the axes between the wafer and the target in accordance with the conditions of film deposition. The adjustment of the distance between the wafer and the target expands the range of film thickness distribution control and allows uniform film to be formed of various target materials.
