发明名称 |
METHOD OF MAKING HIGH ASPECT RATIO FEATURES DURING SURFACE MICROMACHINING |
摘要 |
A method is provided for making a microelectromechanical device with high aspect ratio features. First, an insulating layer is deposited on a substrate. Next, a base in the form of a first conducting layer is deposited on the insulating layer and is patterned. A first sacrificial layer is then deposited on the first conducting layer and patterned. A slider in the form of a second conducting layer is then deposited on the first sacrificial layer and patterned. A second sacrificial layer is then deposited on the second conducting layer and patterned. Next, a retainer in the form of a third conducting layer is deposited on the second sacrificial layer and patterned. A mask is then deposited on the third conducting layer and patterned. Next, a reflector in the form of a fourth layer is deposited through the mask onto the third conducting layer. Finally, the mask, first sacrificial layer and second sacrificial layer are removed.
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申请公布号 |
WO0144105(A1) |
申请公布日期 |
2001.06.21 |
申请号 |
WO2000US29230 |
申请日期 |
2000.10.23 |
申请人 |
CORNING INCORPORATED |
发明人 |
COUILLARD, JAMES, G.;PAI, MINFAN;TIEN, NORMAN, C. |
分类号 |
B81B3/00;G02B26/08;(IPC1-7):B81B3/00 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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