METHOD FOR FORMING CAPACITOR USING HSG LAYER BY SELECTIVE DEPOSITION PROCESS

摘要

PURPOSE: A method for forming a capacitor using an HSG(Hemispherical Silicon Grain) layer by a selective deposition process is provided to reduce a processing time of a capacitor by forming an HSG layer. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate(1). An interlayer dielectric pattern(3) having a contact hole is formed by patterning the interlayer dielectric. A doped amorphous silicon layer is formed on a whole surface of the semiconductor substrate(1) including the interlayer dielectric pattern(3). A lower conductive layer pattern(5) is formed by patterning the doped amorphous silicon layer. A plurality of silicon core is formed on a surface of the lower conductive layer pattern(5). A plurality of HSG is formed selectively on a surface of the lower conductive layer pattern(5). A dielectric layer(11) and an upper conductive layer(13) are formed on the whole surface of the above structure.