| 发明名称 |
PLASMA PROCESSING OF TUNGSTEN USING A GAS MIXTURE COMPRISING A FLUORINATED GAS AND OXYGEN |
| 摘要 |
A method and apparatus for etching of a substrate comprising both a polysilicon layer and an overlying tungsten layer. The method comprises etching the tungsten layer in a chamber using a plasma formed from a gas mixture comprising a fluorinated gas (such as CF4, NF3, SF6, and the like) and oxygen. |
| 申请公布号 |
WO0145152(A1) |
申请公布日期 |
2001.06.21 |
| 申请号 |
WO2000US33749 |
申请日期 |
2000.12.13 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KATSUHISA, KUGIMIYA;NISHIZAWA, TAKANORI;TAJIMA, DAISUKE |
| 分类号 |
H01L21/28;C23F4/00;H01L21/3065;H01L21/3205;H01L21/3213;H01L23/52 |
主分类号 |
H01L21/28 |
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