| 摘要 |
1,220,843. Integrated circuits. GENERAL ELECTRIC INFORMATION SYSTEMS ITALIA. 28 May, 1968 [30 May, 1967], No. 25487/68. Headings HlK and [Also in Division G4] The matrix of surface barrier diodes 7 shown is made from a silicon body la of low resistivity bearing a relatively resistive epitaxial layer lb The body is thermally oxidized and areas of the oxide over the epitaxial layer are removed to allow deposition of the gold surface barrier 5. Formation of the vertical conductors 4 (which lie on the oxide) is started by the vapour deposition of a pattern of Ni-Cr strips, upon which nickel is deposited without breaking the vacuum. An antioxidant layer of gold is then applied electrolytically and resistive bridges 6 of Ni-Cr are formed by vapour deposition. A thick layer of gold is then electrolytically deposited to complete the vertical conductors 4. Oxide is removed from the lower face of the body and a pattern of gold ohmic contact strips 2 applied-these function as a mask through which the body is etched to separate it into row strips which are held together by the vertical conductors 4. The matrix is converted to a read-only memory device by selectively energizing the conductors at power levels sufficient to burn out the resistive bridges 6 in the energized circuits. Such matrices may also be used in integrated logic circuits. Similar structures may be formed which include bipolar or field-effect transistors. |
