METHOD FOR FABRICATING INSULATION LAYER BETWEEN METALLIC INTERCONNECTION PATTERNS

摘要

PURPOSE: A method for fabricating an insulation layer between metallic interconnection patterns is provided to more easily insulate metal interconnection patterns of a semiconductor device by performing a liquid phase deposition(LPD) regarding a substrate to which the metal interconnection pattern is exposed. CONSTITUTION: A metal layer is formed on the substrate(20). A photoresist pattern(24b) is formed on the metal layer. The metal layer is etched to form a metal layer pattern(22a) by using the photoresist pattern as an etch mask. The insulation layer is formed on the substrate where the metal layer pattern and the photoresist pattern are formed. The insulation layer is anisotropically etched to form a spacer insulation layer(26a) on both sidewalls of the metal layer pattern and the photoresist pattern. An insulation layer is formed between the metal layer patterns by an LPD method while using the spacer insulation layer and the photoresist pattern as an oxide barrier layer. The photoresist pattern is eliminated.